C30737PH-500-90N - Si APD, 500um, Plastic, 900nm enhanced
The C30737PH-500-90N Silicon Avalanche Photodiode (APD) provides an active diameter 500 µm with enhanced 900 nm response in a plastic T 1¾ package.
Key Features:
- High responsivity between 500 and 1000 nm
- Low noise and extremely fast rise times at all wavelengths with a frequency response above 380 MHz
- Active diameter of 500μm and optimized for 900 nm peak sensitivity
- Plastic T 1¾ option "PH"
Applications:
- LiDAR
- Laser-range finding
- Security scanning
- Applications requiring a low-cost, high-performing detector
Active Diameter: 500μm
Peak Sensitivity Wavelength: 900 nm
Breakdown Voltage Vbd: 180-260 (binning available)
Temperature Coefficient of Vop for Constant M: 1.3 V/°C
Gain: 100 @900nm
Responsivity: 60 A/W at 800 nm
Dark Current Id: 0.1 <1 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 1 pF
Rise/Fall Time: 0.9 ns R load = 50Ω
Cut-off Frequency: 380 MHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: Plastic T 1¾ through hole
Active Diameter: 500μm
Peak Sensitivity Wavelength: 900 nm
Breakdown Voltage Vbd: 180-260 (binning available)
Temperature Coefficient of Vop for Constant M: 1.3 V/°C
Gain: 100 @900nm
Responsivity: 60 A/W at 800 nm
Dark Current Id: 0.1 <1 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 1 pF
Rise/Fall Time: 0.9 ns R load = 50Ω
Cut-off Frequency: 380 MHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: Plastic T 1¾ through hole