C30739ECERH-2 - Si APD, Ceramic Carrier, High-Gain
The C30739ECERH-2 Short-Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) covers the spectral range from less than 400 nm to greater than 700 nm. With low noise, high gain, low capacitance and an enhanced UV-response with a quantum efficiency above 70% at 430 nm, this Si APD is designed for low-light level applications such as molecular imaging. Its ceramic carrier package allows for easy handling and coupling to scintillation crystals such as LSO and BGO.
Features & Benefits:
- Si APD with enhanced UV response
- Quantum efficiency larger 70% at 430 nm
- Flat ceramic package - easy coupling to scintillators
- Non-magnetic package
Applications:
- Molecular imaging
- Nuclear medicine
- Fluorescense detection
- High-energy physics
- Safety radiation detection
- Environmental monitoring
Active Area: 5.6x5.6 mm
Breakdown Voltage: 400, <450 V
Capacitance: 60 pF
Dark Current: 1.5 nA
Gain: >100
Noise Current:
Response Time: 2 ns
Responsivity: 26 A/W for C30739ECERH, 52 A/W for C30739ECERH-2 at 430 nm and typical gain
Rise/Fall Time: 2 ns
Spectral Noise Current: 0.3 pA/√Hz for C30739ECERH, 0.4 pA/√Hz for C30739ECERH-2
Wavelength: 400-700 nm
Active Area: 5.6x5.6 mm
Breakdown Voltage: 400, <450 V
Capacitance: 60 pF
Dark Current: 1.5 nA
Gain: >100
Noise Current:
Response Time: 2 ns
Responsivity: 26 A/W for C30739ECERH, 52 A/W for C30739ECERH-2 at 430 nm and typical gain
Rise/Fall Time: 2 ns
Spectral Noise Current: 0.3 pA/√Hz for C30739ECERH, 0.4 pA/√Hz for C30739ECERH-2
Wavelength: 400-700 nm