VTP3420LA - T-1 Lensed IRT, 1.64mm2
The VTP3420LA is a silicon photodiode in a visible-blocking end-looking, long T1 lensed package with an enhanced response in the near IR spectral range. This photodiode exhibits a very high shunt resistance, low dark current and low capacitance.
This fast response silicon photodiode provides a 1.64 mm2 active area and is designed for a spectral response between 700 nm and 1150 nm.
This series of photodiodes is designed for low-junction capacitance to achieve fast response times and can be operated under reverse bias to decrease the capacitance in order to further increase the speed of response. These photodiodes can also be operated in photovoltaic mode in applications where speed of response is not critical.
These photodiodes have excellent response in the near IR spectral range and are well matched to the Excelitas Infrared LED VTE Series.
Features & Benefits:
- Near IR spectral range
- 1 to 2% linearity over 7 to 9 decades
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- High reverse voltage rating
- RoHs compliant
Applications:
- Smoke detection
- Barcode scanning
- Light meters
- Pulse oximeters
Active area = 1.64 mm2 active area
Short Circuit Current = Minimum 34 µA at 100 fc, 2850 K
Dark Current = Maximum 35 nA at 10 V Reverse Bias
Junction Capacitance = Maximum 150 pF at 15 V Reverse Bias
Spectral Range = 700 nm to 1150 nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.55 A/W
Active area = 1.64 mm2 active area
Short Circuit Current = Minimum 34 µA at 100 fc, 2850 K
Dark Current = Maximum 35 nA at 10 V Reverse Bias
Junction Capacitance = Maximum 150 pF at 15 V Reverse Bias
Spectral Range = 700 nm to 1150 nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.55 A/W