VTP9812FH - Si PD, T-1 3/4, 1.5mm2
The VTP9812FH Silicon (Si) Photodiode is designed in an infrared blocking T1 ¾ flat package and provides an excellent response in the visible spectral range. This Si photodiode exhibits a very high shunt resistance, low dark current and low capacitance.
The VTP9812FH Silicon Photodiode is a a fast response silicon photodiode in an infrared blocking T1 ¾ flat package package having a 1.548 mm2 active area and designed for spectral response between 400nm and 700 nm.
This series of photodiodes has been designed for low-junction capacitance to achieve fast response times and can be operated under reverse bias to decrease the capacitance in order to further increase the speed of response. In applications where speed of response is not critical, these photodiodes can also be operated in photovoltaic mode.
Features & Benefits:
- Spectral response close to the human eye
- 1 to 2% linearity over 7 to 9 decades
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- High reverse voltage rating
- RoHs compliant
Applications:
- Interior and exterior light control and light switching
- Automotive headlight dimmer
- Display contrast control
- Energy conservation
Active area = 1.548 mm2
Short Circuit Current = Minimum 0.7 µA at 100 fc, 2850 K
Dark Current = Maximum 10 nA at 10 V Reverse Bias
Junction Capacitance = Maximum 150 pF at 10 V Reverse Bias
Spectral Range = 400 nm to 70 0 nm
Peak Spectral Response = 580 nm
Sensitivity at peak Wavelength = Typical 0.034 A/W
Angular Response = ±50 Degrees at 50% Response
Soldering Temperature = Maximum 260°C
Active area = 1.548 mm2
Short Circuit Current = Minimum 0.7 µA at 100 fc, 2850 K
Dark Current = Maximum 10 nA at 10 V Reverse Bias
Junction Capacitance = Maximum 150 pF at 10 V Reverse Bias
Spectral Range = 400 nm to 70 0 nm
Peak Spectral Response = 580 nm
Sensitivity at peak Wavelength = Typical 0.034 A/W
Angular Response = ±50 Degrees at 50% Response
Soldering Temperature = Maximum 260°C