VTT9812FH - Si Phototransistor, 0.192mm2
The VTT9812FH is a silicon phototransistor in an infrared-blocking, flat T 1 ¾ end-looking package. This Silicon phototransistor provides an excellent response in the visible spectral range.
The VTT9812FH includes the time-proven VTT silicon phototransistor chip family that customers have come to rely upon over the years, with the additional IR-blocking feature incorporated in the plastic epoxy package. As such it gives an excellent response in the visible spectral range (450 to 700 nm), giving a RoHS-compliant alternative to Cadmium Sulphide photocells. The VTT9812FH is designed for dusk/dawn switching at low light levels around 0.2 to 1 fc (2 to 10 lux).
Features & Benefits:
- Visible light response with IR-blocking feature incorporated in
the casting epoxy - Low dark current
- RoHS-compliant alternative to photocells
Applications:
- Street light switching
- Interior and exterior light control (dusk/dawn switch)
- Automotive headlight dimmer
- Display contrast control
- Energy conservation
Active area = 0.192 mm2
Short Circuit Current = Minimum 60 µA at 100 fc, 2850 K
Dark Current = Maximum 50 nA at 5 V VCE
Spectral Range = 450 nm to 700 nm
Peak Spectral Response = 585 nm
Sensitivity at peak Wavelength = Typical 7 A/W
Angular Response = ±50 Degrees at 50 % Response
Soldering Temperature = Maximum 260°C
Active area = 0.192 mm2
Short Circuit Current = Minimum 60 µA at 100 fc, 2850 K
Dark Current = Maximum 50 nA at 5 V VCE
Spectral Range = 450 nm to 700 nm
Peak Spectral Response = 585 nm
Sensitivity at peak Wavelength = Typical 7 A/W
Angular Response = ±50 Degrees at 50 % Response
Soldering Temperature = Maximum 260°C