Silicon phototransistor
PART/ VTT9812FH

VTT9812FH - Si Phototransistor, 0.192mm2

The VTT9812FH is a silicon phototransistor in an infrared-blocking, flat T 1 ¾ end-looking package. This Silicon phototransistor provides an excellent response in the visible spectral range.

The VTT9812FH includes the time-proven VTT silicon phototransistor chip family that customers have come to rely upon over the years, with the additional IR-blocking feature incorporated in the plastic epoxy package. As such it gives an excellent response in the visible spectral range (450 to 700 nm), giving a RoHS-compliant alternative to Cadmium Sulphide photocells. The VTT9812FH is designed for dusk/dawn switching at low light levels around 0.2 to 1 fc (2 to 10 lux).

Features & Benefits:

  • Visible light response with IR-blocking feature incorporated in
    the casting epoxy
  • Low dark current
  • RoHS-compliant alternative to photocells

Applications:

  • Street light switching
  • Interior and exterior light control (dusk/dawn switch)
  • Automotive headlight dimmer
  • Display contrast control
  • Energy conservation

Active area = 0.192 mm2

Short Circuit Current = Minimum 60 µA at 100 fc, 2850 K

Dark Current = Maximum 50 nA at 5 V VCE

Spectral Range = 450 nm to 700 nm

Peak Spectral Response = 585 nm

Sensitivity at peak Wavelength = Typical 7 A/W

Angular Response = ±50 Degrees at 50 % Response

Soldering Temperature = Maximum 260°C

Active area = 0.192 mm2

Short Circuit Current = Minimum 60 µA at 100 fc, 2850 K

Dark Current = Maximum 50 nA at 5 V VCE

Spectral Range = 450 nm to 700 nm

Peak Spectral Response = 585 nm

Sensitivity at peak Wavelength = Typical 7 A/W

Angular Response = ±50 Degrees at 50 % Response

Soldering Temperature = Maximum 260°C