C30645 InGaAs Avalanche Photodiodes Series
The C30645 Series combines various products of large-area InGaAs Avalanche Photodiodes (APD) with an 80 µm active area. Excelitas InGaAs APDs provide high quantum efficiency (QE), high responsivity, and low noise in the spectral range between 1000 nm and 1700 nm. They are supplied in a hermetically sealed TO-18 package or on a ceramic carrier. The ceramic surface mount package allows for easy integration into high-volume applications.
With their high bandwidth and low noise, the Excelitas C30645 Series helps OEMs and system manufacturers achieve cutting-edge noise specifications with optimal Signal-to-Noise Ratios (SNRs). In particular, the new and enhanced low-noise option helps increase range and performance on LiDAR and eye-safe range-finding systems with the same laser output power. Coherent OTDR and fiber sensing applications like DTS or DAS benefit from enhanced sensitivity on longer ranges when detecting Raman-scattered signals.
| Series Model # | Package Type | Window Material | Window Aperture | Comments |
| C30645ECERH | Ceramic Carrier | N/A | N/A | |
| C30645EH | TO-18, 2 pin | Silicon | Small2 | |
| C30645EH-1 | Glass1 | Large2 | ||
| C30645EH-2 | TO-46, 3 pin | 3. ground pin | ||
| C30645EH-7 | TO-18, 2 pin | Silicon | Small2 | low noise |
| C30645EH-27 | TO-46, 3 pin | Glass1 | Large2 | low noise, 3. ground pin |
| C30645L-080 | SMD | Glass1 | N/A | |
| C30645L-080-1 | Silicon | |||
| C30645L-080-7 | Glass | low noise | ||
| C30645L-080-17 | Silicon |
Note 1: Glass material is transparent for visible and IR wavelengths, while silicon blocks visible light up to about 1.1 µm.
Note 2: AR-coated window.
| Parameter | Symbol | Minimum | Typical | Maximum | Units | |
| Rise Time / Fall Time | tr/tf | 0.3 | ns | |||
| Bandwidth | f3dB | 1000 | MHz | |||
| Capacitance | Standard | C | 1.25 | pF | ||
| SMD | 1.45 | |||||
| Dark Current | Standard | iD | 2.5 | 15 | nA | |
| SMD | 1 | 5 | ||||
| Dark Noise | Standard | iN | 0.2 | 0.6 | pA/√(Hz) | |
| Low Noise | 0.1 | 0.25 | ||||
| Noise Equivalent Power | Standard | NEP | 25 | 64 | fW/√(Hz) | |
| Low Noise | 11 | 26 | ||||
| Operating Gain | M | 10 | 20 | |||
| Parameter | Symbol | Minimum | Typical | Maximum | Units |
| Breakdown Voltage | VBD | 45 | 50 | 70 | V |
| Spectral Range | Δλ | 1000 | 1700 | nm | |
| Quantum Efficiency | QE | C | % | ||
| Responsivity @1550 nm | R | 9.3 | A/W | ||
| Temperature Coefficient of VBD | ΔV/ΔT | 0.14 | 0.2 | V/°C |
| Series Model # | Package Type | Window Material | Window Aperture | Comments |
| C30645ECERH | Ceramic Carrier | N/A | N/A | |
| C30645EH | TO-18, 2 pin | Silicon | Small2 | |
| C30645EH-1 | Glass1 | Large2 | ||
| C30645EH-2 | TO-46, 3 pin | 3. ground pin | ||
| C30645EH-7 | TO-18, 2 pin | Silicon | Small2 | low noise |
| C30645EH-27 | TO-46, 3 pin | Glass1 | Large2 | low noise, 3. ground pin |
| C30645L-080 | SMD | Glass1 | N/A | |
| C30645L-080-1 | Silicon | |||
| C30645L-080-7 | Glass | low noise | ||
| C30645L-080-17 | Silicon |
Note 1: Glass material is transparent for visible and IR wavelengths, while silicon blocks visible light up to about 1.1 µm.
Note 2: AR-coated window.
| Parameter | Symbol | Minimum | Typical | Maximum | Units | |
| Rise Time / Fall Time | tr/tf | 0.3 | ns | |||
| Bandwidth | f3dB | 1000 | MHz | |||
| Capacitance | Standard | C | 1.25 | pF | ||
| SMD | 1.45 | |||||
| Dark Current | Standard | iD | 2.5 | 15 | nA | |
| SMD | 1 | 5 | ||||
| Dark Noise | Standard | iN | 0.2 | 0.6 | pA/√(Hz) | |
| Low Noise | 0.1 | 0.25 | ||||
| Noise Equivalent Power | Standard | NEP | 25 | 64 | fW/√(Hz) | |
| Low Noise | 11 | 26 | ||||
| Operating Gain | M | 10 | 20 | |||
| Parameter | Symbol | Minimum | Typical | Maximum | Units |
| Breakdown Voltage | VBD | 45 | 50 | 70 | V |
| Spectral Range | Δλ | 1000 | 1700 | nm | |
| Quantum Efficiency | QE | C | % | ||
| Responsivity @1550 nm | R | 9.3 | A/W | ||
| Temperature Coefficient of VBD | ΔV/ΔT | 0.14 | 0.2 | V/°C |