C30645 InGaAs APD Series

C30645 InGaAs Avalanche Photodiodes Series

The C30645 Series combines various products of large-area InGaAs Avalanche Photodiodes (APD) with an 80 µm active area. Excelitas InGaAs APDs provide high quantum efficiency (QE), high responsivity, and low noise in the spectral range between 1000 nm and 1700 nm. They are supplied in a hermetically sealed TO-18 package or on a ceramic carrier. The ceramic surface mount package allows for easy integration into high-volume applications.

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With their high bandwidth and low noise, the Excelitas C30645 Series helps OEMs and system manufacturers achieve cutting-edge noise specifications with optimal Signal-to-Noise Ratios (SNRs). In particular, the new and enhanced low-noise option helps increase range and performance on LiDAR and eye-safe range-finding systems with the same laser output power. Coherent OTDR and fiber sensing applications like DTS or DAS benefit from enhanced sensitivity on longer ranges when detecting Raman-scattered signals.

 Series Model # Package Type Window Material Window Aperture Comments
 C30645ECERH Ceramic Carrier N/A N/A  
 C30645EH TO-18 Silicon Small2  
 C30645EH-1 Glass1 Large2  
 C30645EH-2 TO-46 3. ground pin
 C30645EH-7 TO-18 low noise
 C30645EH-27 TO-46 low noise, 3. ground pin
 C30645L-080 SMD
 		 Glass1 N/A  
 C30645L-080-1 Silicon  
 C30645L-080-7 Glass low noise
 C30645L-080-17 Silicon

 

 

 

 

 

 

 

 

 

Note 1: Glass material is transparent for visible and IR wavelengths, while silicon blocks visible light up to about 1.1 µm.
Note 2: AR-coated window.  

 

 

 Parameter Symbol Minimum Typical Maximum Units
 Rise Time / Fall Time tr /tf   0.3   ns
 Bandwidth f3dB 1000     MHz

 Capacitance

 Standard C   1.25   pF
SMD   1.45  
 Dark Current Standard iD   2.5 15 nA
SMD   1 5
 Dark Noise Standard iN   0.2 0.6 pA/√(Hz)
Low Noise   0.1 0.25
 Noise Equivalent Power Standard NEP   25 64 fW/√(Hz)
Low Noise   11 26
 Operating Gain M 10 20  

 

 

 

 

 

 

 

 

 

 

 

  

 

 

 Parameter Symbol Minimum Typical Maximum Units
 Breakdown Voltage VBD 45 50 70 V
 Spectral Range Δλ 1000   1700 nm
 Quantum Efficiency QE C     %
 Responsivity @1550 nm R 9.3     A/W
 Temperature Coefficient of VBD ΔV/ΔT   0.14 0.2 V/°C

 

 

 

 

 

 

 Series Model # Package Type Window Material Window Aperture Comments
 C30645ECERH Ceramic Carrier N/A N/A  
 C30645EH TO-18 Silicon Small2  
 C30645EH-1 Glass1 Large2  
 C30645EH-2 TO-46 3. ground pin
 C30645EH-7 TO-18 low noise
 C30645EH-27 TO-46 low noise, 3. ground pin
 C30645L-080 SMD
 		 Glass1 N/A  
 C30645L-080-1 Silicon  
 C30645L-080-7 Glass low noise
 C30645L-080-17 Silicon

 

 

 

 

 

 

 

 

 

Note 1: Glass material is transparent for visible and IR wavelengths, while silicon blocks visible light up to about 1.1 µm.
Note 2: AR-coated window.  

 

 

 Parameter Symbol Minimum Typical Maximum Units
 Rise Time / Fall Time tr /tf   0.3   ns
 Bandwidth f3dB 1000     MHz

 Capacitance

 Standard C   1.25   pF
SMD   1.45  
 Dark Current Standard iD   2.5 15 nA
SMD   1 5
 Dark Noise Standard iN   0.2 0.6 pA/√(Hz)
Low Noise   0.1 0.25
 Noise Equivalent Power Standard NEP   25 64 fW/√(Hz)
Low Noise   11 26
 Operating Gain M 10 20  

 

 

 

 

 

 

 

 

 

 

 

  

 

 

 Parameter Symbol Minimum Typical Maximum Units
 Breakdown Voltage VBD 45 50 70 V
 Spectral Range Δλ 1000   1700 nm
 Quantum Efficiency QE C     %
 Responsivity @1550 nm R 9.3     A/W
 Temperature Coefficient of VBD ΔV/ΔT   0.14 0.2 V/°C

 

 

 

 

 

 

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