C30662 InGaAs APD Series

C30662 InGaAs Avalanche Photodiodes Series

The C30662 Series features a variety of large-area InGaAs Avalanche Photodiodes (APDs) with a 200 µm active area. Excelitas InGaAs APDs offer high quantum efficiency (QE), robust responsivity, and low noise across the spectral range of 1000 nm to 1700 nm. These devices are available in a hermetically sealed TO-18 package or on a ceramic carrier. The ceramic surface mount package facilitates easy integration into high-volume applications.

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The Excelitas C30662 Series offers high bandwidth and low noise, enabling OEMs and system manufacturers to achieve advanced noise specifications with optimal Signal-to-Noise Ratios (SNRs). The newly enhanced low-noise option improves the range and performance of LiDAR and eye-safe range-finding systems while maintaining the same laser output power. Additionally, coherent Optical Time Domain Reflectometry (OTDR) and fiber sensing applications, such as Distributed Temperature Sensing (DTS) and Distributed Acoustic Sensing (DAS), benefit from improved sensitivity over longer ranges when detecting Raman-scattered signals.

 Series Model # Package Type Window Material Window Aperture Comments
 C30662ECERH Ceramic Carrier N/A N/A  
 C30662ECERH-1 ΔV > 4 V
 C30662EH TO-18 Glass1 Large2  
 C30662EH-1 ΔV > 4 V
 C30662EH-2 TO-46 3. ground pin
 C30662EH-3 TO-18 Small  
 C30662EH-5 Silicon Small2  
 C30662EH-7 Glass1 Large2 low noise
 C30662EH-27 TO-46 low noise,
3. ground pin
 C30662L-200 SMD N/A  
 C30662L-200-1 Silicon  
 C30662L-200-7 Glass1 low noise
 C30662L-200-17 Silicon

Note 1: Glass material is transparent for visible and IR wavelengths, while silicon blocks visible light up to about 1.1 µm.
Note 2: AR-coated window.

 

 Parameter Symbol  Minimum Typical Maximum Units
 Rise Time/Fall Time   tr /tf   0.4   ns
 Bandwidth   f3dB 600 850   MHz
 Capacitance  Standard C   2.5   pF
 SMD C   2.7  
 Dark Current  Standard iD   13 35 nA
 Low Noise iD   7.5 15
 Dark Noise  Standard iN   0.45 1 pA/√(Hz)
 Low Noise iN   0.35 0.5
 Noise Equivalent   Power  Standard NEP   48 106 fW/√(Hz)
 Noise Equivalent Power  Low Noise NEP   37 53
 Operating Gain   M 10 20    
 Operating Point from   Breakdown   ΔV 4     V

 

 Parameter Symbol Minimum  Typical Maximum Units
 Breakdown Voltage VBD 45 50 70 V
 Spectral Range Δλ 1000   1700 nm
 Quantum Efficiency QE 75     %
 Responsivity @1550 nm R 9.3     A/W
 Temperature Coefficient of VBD ΔV/ΔT   0.14 0.2 V/°C

 

 

 Series Model # Package Type Window Material Window Aperture Comments
 C30662ECERH Ceramic Carrier N/A N/A  
 C30662ECERH-1 ΔV > 4 V
 C30662EH TO-18 Glass1 Large2  
 C30662EH-1 ΔV > 4 V
 C30662EH-2 TO-46 3. ground pin
 C30662EH-3 TO-18 Small  
 C30662EH-5 Silicon Small2  
 C30662EH-7 Glass1 Large2 low noise
 C30662EH-27 TO-46 low noise,
3. ground pin
 C30662L-200 SMD N/A  
 C30662L-200-1 Silicon  
 C30662L-200-7 Glass1 low noise
 C30662L-200-17 Silicon

Note 1: Glass material is transparent for visible and IR wavelengths, while silicon blocks visible light up to about 1.1 µm.
Note 2: AR-coated window.

 

 Parameter Symbol  Minimum Typical Maximum Units
 Rise Time/Fall Time   tr /tf   0.4   ns
 Bandwidth   f3dB 600 850   MHz
 Capacitance  Standard C   2.5   pF
 SMD C   2.7  
 Dark Current  Standard iD   13 35 nA
 Low Noise iD   7.5 15
 Dark Noise  Standard iN   0.45 1 pA/√(Hz)
 Low Noise iN   0.35 0.5
 Noise Equivalent   Power  Standard NEP   48 106 fW/√(Hz)
 Noise Equivalent Power  Low Noise NEP   37 53
 Operating Gain   M 10 20    
 Operating Point from   Breakdown   ΔV 4     V

 

 Parameter Symbol Minimum  Typical Maximum Units
 Breakdown Voltage VBD 45 50 70 V
 Spectral Range Δλ 1000   1700 nm
 Quantum Efficiency QE 75     %
 Responsivity @1550 nm R 9.3     A/W
 Temperature Coefficient of VBD ΔV/ΔT   0.14 0.2 V/°C

 

 

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