PART/ C30916EH
C30916EH - Si APD, 1.5mm, TO-5 Low-Profile
The C30916EH Large-Area Silicon Avalanche Photodiode provides a 1.5 mm active area diameter in TO-5 housing.
The Excelitas C30916EH is a general-purpose silicon avalanche photodiode made using a double-diffused ''reach through'' structure. This structure provides high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths.
Features & Benefits:
- Low noise
- High gain
- High quantum efficiency
- Built-in TE-cooler option
Applications:
- Laser-range finding
- LiDAR
- Free space communication
- Spectrophotometers
- Fluorescence detection
| Active Area | 1.7 mm² |
| Active Diameter | 1.5 mm |
| Breakdown Voltage | >315, 390, <490 V |
| Capacitance | 3pF |
| Dark Current | 100 nA |
| Gain | 80 |
| NEP | 20 fW/√Hz |
| Package | TO-5 |
| Peak Sensitivity Wavelength | 900 nm |
| Responsivity | >50 A/W at 900 nm, 12 A/W at 1060 nm |
| Rise/Fall Time | 3 ns |
| Active Area | 1.7 mm² |
| Active Diameter | 1.5 mm |
| Breakdown Voltage | >315, 390, <490 V |
| Capacitance | 3pF |
| Dark Current | 100 nA |
| Gain | 80 |
| NEP | 20 fW/√Hz |
| Package | TO-5 |
| Peak Sensitivity Wavelength | 900 nm |
| Responsivity | >50 A/W at 900 nm, 12 A/W at 1060 nm |
| Rise/Fall Time | 3 ns |