C30916EH - Si APD, 1.5mm, TO-5 Low-Profile
The C30916EH Large-Area Silicon Avalanche Photodiode provides a 1.5 mm active area diameter in TO-5 housing.
The Excelitas C30916EH is a general-purpose silicon avalanche photodiode made using a double-diffused ''reach through'' structure. This structure provides high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths.
Features & Benefits:
- Low noise
- High gain
- High quantum efficiency
- Built-in TE-cooler option
Applications:
- Laser-range finding
- LiDAR
- Free space communication
- Spectrophotometers
- Fluorescence detection
Active Area: 1.7 mm²
Active Diameter: 1.5 mm
Breakdown Voltage: >315, 390, <490 V
Capacitance: 3pF
Dark Current: 100 nA
Gain: 80
NEP: 20 fW/√Hz
Package: TO-5
Peak Sensitivity Wavelength: 900 nm
Responsivity: >50 A/W at 900 nm, 12 A/W at 1060 nm
Rise/Fall Time: 3 ns
Active Area: 1.7 mm²
Active Diameter: 1.5 mm
Breakdown Voltage: >315, 390, <490 V
Capacitance: 3pF
Dark Current: 100 nA
Gain: 80
NEP: 20 fW/√Hz
Package: TO-5
Peak Sensitivity Wavelength: 900 nm
Responsivity: >50 A/W at 900 nm, 12 A/W at 1060 nm
Rise/Fall Time: 3 ns