Mechanical pin-out of the YAG-100AH
YAG series typical spectral responsivity at room temperature.
PART/ YAG-100AH

YAG-100 Series Photodiodes - Si PIN - 2.54 mm

Excelitas Technologies’ YAG series of Silicon PIN detectors are high-performance N-type or P-type Si PIN photodiodes in hermetically sealed TO packages.

These photodiodes perform well over the 400 nm to 1100 nm wavelength range, with enhanced IR responsivity, making them ideal for 1064 nm detection applications.

A guard ring collects current generated outside the active area, ensuring the current will not contribute to noise.

Because of its large active area, the device is useful in obtaining position information from both focused and defocused spots in either pulsed or CW mode.

Key Features and Benefits:

  • High quantum efficiency at 1064 nm
  • Package style: Hermetic TO-5 can
  • Available in N- and P-type configuration
  • Active diameter (mm): 2.5
YAG series typical spectral responsivity at room temperature

Active diameter (mm): 2.5
Active area per element (mm²): 4.9
Typical Capacitance per quadrant (pF): 12
Typical responsivity at 900 nm (A/W): 0.60
Typical responsivity at 1064 nm (A/W): 0.44
Typical responsivity at 1064 nm for -AR suffix (A/W): 0.47
Typical rise time, 50Ω load (ns): 12
Maximal operating voltage (V): 180
Minimal Breakdown Voltage (V): 200
Typical capacitance (pF): 2.5
Typical dark current (nA): 11
Maximal dark current (nA): 20
Typical noise current (pA/Hz): 0.06
Noise equivalent power (NEP) at 1064 nm (pW/Hz): 0.08
Package: TO-8 custom

Storage temperature range (℃): -55 to 125
Operating temperature range (℃): -55 to 125

Active diameter (mm): 2.5
Active area per element (mm²): 4.9
Typical Capacitance per quadrant (pF): 12
Typical responsivity at 900 nm (A/W): 0.60
Typical responsivity at 1064 nm (A/W): 0.44
Typical responsivity at 1064 nm for -AR suffix (A/W): 0.47
Typical rise time, 50Ω load (ns): 12
Maximal operating voltage (V): 180
Minimal Breakdown Voltage (V): 200
Typical capacitance (pF): 2.5
Typical dark current (nA): 11
Maximal dark current (nA): 20
Typical noise current (pA/Hz): 0.06
Noise equivalent power (NEP) at 1064 nm (pW/Hz): 0.08
Package: TO-8 custom

Storage temperature range (℃): -55 to 125
Operating temperature range (℃): -55 to 125