TPG2EW1S09 - 905nm Generation 2 Triple-Cavity 225 µm Plastic PLD
The Excelitas “Generation 2“ pulsed semiconductor laser, emitting at 905 nm in the near IR, uses a multi-layer monolithic chip design. Its improved GaAs structure is offering 85 W pulsed peak power when driven at 30 A. The multi-layer chip design features an emitting area of (225 x 10) μm by emission of three laser lines, offering high output power in a small emitting area. The T1¾ (TO-like) plastic encapsulated package complements Excelitas’ PGA series epi-cavity lasers in hermetic metal or SMD packages and are ideally suited for high volume applications.