905nm High-Volume Pulsed Semiconductor Laser Diodes

The Excelitas “Generation 2“ pulsed semiconductor laser, emitting at 905 nm in the near IR, uses a multi-layer monolithic chip design. Its improved GaAs structure is offering 85 W pulsed peak power when driven at 30 A. The multi-layer chip design features an emitting area of (225 x 10) μm by emission of three laser lines, offering high output power in a small emitting area. The T1¾ (TO-like) plastic encapsulated package complements Excelitas’ PGA series epi-cavity lasers in hermetic metal or SMD packages and are ideally suited for high volume applications.

The TPGAD1S03H is an SMD packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 75 µm stripe width. It provides 20 W @ 10 A tested with a 50 ns wide pulse, and is offered in various other packages.

The TPGAD1S09H is an SMD packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 225 µm stripe width. It provides 70 W @ 30 A tested with a 50 ns wide pulse, and is offered in various other packages.

The PGAD1S03H is an SMD packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, single cavity chip with a 75 µm stripe width. It provides 8 W @ 10 A tested with a 50 ns wide pulse, and is offered in various other packages.

The LTPGAU1S03 is a metal packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 75 µm stripe width. It provides 24 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The LQPGAU1S03 is a metal packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 75 µm stripe width. It provides 24 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The LTPGAU1S09 is a metal packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 225 µm stripe width. It provides 75 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.

The PGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, single cavity chip with a 75 µm stripe width. It provides 6.5 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The DPGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, dual cavity chip with a 75 µm stripe width. It provides 13 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The TPGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 75 µm stripe width. It provides 20 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The PGEW1S09H is a plastic packaged high efficiency 905 nm pulsed laser diode, comprised of a single stack, single cavity chip with a 225 µm stripe width. It provides 23 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.

The DPGEW1S09H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, dual cavity chip with a 225 µm stripe width. It provides 45 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.

The TPGEW1S09H is a plastic packaged, high efficiency 905nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 225 µm stripe width. It provides 70 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.

The QPGEW1S01.5H is a plastic-packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, quad cavity chip with a 37.5 µm stripe width. It provides 10 W @ 5 A tested with a 100 ns wide pulse, and is offered in various other packages.

The QPGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, quad cavity chip with a 75 µm stripe width. It provides 25 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The QPGEW1S09H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, quad cavity chip with a 225 µm stripe width. It provides 85 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.