905nm High-Volume Pulsed Semiconductor Laser Diodes

The Excelitas “Generation 2“ pulsed semiconductor laser, emitting at 905 nm in the near IR, uses a multi-layer monolithic chip design. Its improved GaAs structure is offering 85 W pulsed peak power when driven at 30 A. The multi-layer chip design features an emitting area of (225 x 10) μm by emission of three laser lines, offering high output power in a small emitting area. The T1¾ (TO-like) plastic encapsulated package complements Excelitas’ PGA series epi-cavity lasers in hermetic metal or SMD packages and are ideally suited for high volume applications.

The Excelitas Generation 3 TPG3AD1S09 Pulsed Laser Diode is a high-efficiency 905 nm edge-emitting laser diode in an SMD package. The TPG3AD1S09 features a power slope of 3 W/A and enhanced output power of 120 W when operated at 40 A, extending the detection range to enable applications of tomorrow. This pulsed laser diode provides high output power ideally suited for long-distance range finder applications and offers a power-efficient solution for short- to mid-range systems.

The TPGAD1S03H is an SMD packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 75 µm stripe width. It provides 20 W @ 10 A tested with a 50 ns wide pulse, and is offered in various other packages.

The TPGAD1S09H is an SMD packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 225 µm stripe width. It provides 70 W @ 30 A tested with a 50 ns wide pulse, and is offered in various other packages.

The PGAD1S03H is an SMD packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, single cavity chip with a 75 µm stripe width. It provides 8 W @ 10 A tested with a 50 ns wide pulse, and is offered in various other packages.

The LTPGAU1S03 is a metal packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 75 µm stripe width. It provides 24 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The LQPGAU1S03 is a metal packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 75 µm stripe width. It provides 24 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The LTPGAU1S09 is a metal packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 225 µm stripe width. It provides 75 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.

The PGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, single cavity chip with a 75 µm stripe width. It provides 6.5 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The DPGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, dual cavity chip with a 75 µm stripe width. It provides 13 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The TPGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 75 µm stripe width. It provides 20 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The PGEW1S09H is a plastic packaged high efficiency 905 nm pulsed laser diode, comprised of a single stack, single cavity chip with a 225 µm stripe width. It provides 23 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.

The DPGEW1S09H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, dual cavity chip with a 225 µm stripe width. It provides 45 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.

The TPGEW1S09H is a plastic packaged, high efficiency 905nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 225 µm stripe width. It provides 70 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.

The QPGEW1S01.5H is a plastic-packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, quad cavity chip with a 37.5 µm stripe width. It provides 10 W @ 5 A tested with a 100 ns wide pulse, and is offered in various other packages.

The QPGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, quad cavity chip with a 75 µm stripe width. It provides 25 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The QPGEW1S09H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, quad cavity chip with a 225 µm stripe width. It provides 85 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.