SEARCH RESULTS (2072)
Product
Excelitas continues to provide technical support for discontinued PCO cameras with access to corresponding software downloads and user manuals. See below for a list of discontinued PCO High-Speed Cameras with available software and user manuals for download.
Product
Cermax® Xenon arc-lamp power supplies are advanced, innovative products designed for the specialty lighting industry. They are used in a wide variety of high-performance applications including medical, dental, endoscopy, industrial, and image projection.
Product Category
PCO offers a variety of supporting documentation, software and drawings for all cameras and systems, including discontinued products. Please refer below to the relevant product to download applicable documentation and complimentary software.If you require technical support or have a specific request about our PCO cameras, please contact us using the PCO Support Request Form.
Product
The C30822EH is a Silicon PIN Photodiode with a 5.0 mm active diameter chip in a hermetically-sealed TO-8 package designed for the 300 nm to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².
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The C30950EH is a Silicon Avalanche Photodiode (Si APD) Amplifier Module with 50 MHz bandwidth and includes our C30817 silicon avalanche photodiode (APD). With a useful diameter of 0.8 mm, the C30950EH provides good response between 400 and 1100 nm and is supplied in a modified 12-lead TO-8 package.
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The C30916EH Large-Area Silicon Avalanche Photodiode provides a 1.5 mm active area diameter in TO-5 housing.
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Excelitas’ C30902SH Avalanche Photodiodes are high speed, large area Silicon APDs that provide high responsivity at low noise. They are specially selected to be used either in Geiger Mode (VOP > VBD) for detection of single photons or Linear Mode (VOP < VBD) with gains up to 250.
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Excelitas’ C30902SH Avalanche Photodiodes are high speed, large area Silicon APDs that provide high responsivity at low noise. They are specially selected to be used either in Geiger Mode (VOP > VBD) for detection of single photons or Linear Mode (VOP < VBD) with gains up to 250.
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Excelitas’ C30902SH Avalanche Photodiodes are high speed, large area Silicon APDs that provide high responsivity at low noise. They are specially selected to be used either in Geiger Mode (VOP > VBD) for detection of single photons or Linear Mode (VOP < VBD) with gains up to 250.
Product
The C30808EH is a Silicon PIN Photodiode with a 2.5 mm active diameter chip in a hermetically sealed TO-5 package designed for the 300 to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².
Product
The C30956EH Large-area, Long Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 3 mm active area diameter with high quantum efficiency at 1060 nm. Designed in a TO-8 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
Product
The C30927EH-03 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused "reach-through" structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-03 is optimized for operating at 800 nm, providing high…
Product
Excelitas’ C30902SH Avalanche Photodiodes are high speed, large area Silicon APDs that provide high responsivity at low noise. They are specially selected to be used either in Geiger Mode (VOP > VBD) for detection of single photons or Linear Mode (VOP < VBD) with gains up to 250.
Product
Excelitas’ C30902EH Avalanche Photodiodes are high speed, large area silicon reach-through APDs that provide high responsivity at low noise. They are especially designed for low light applications that require typical gains larger than 100 and are offered within several TO-18 package configurations as flat glass, ball lens, light pipe and 905 nm filter.
Product
Excelitas’ C30902EH Avalanche Photodiodes are high speed, large area silicon reach-through APDs that provide high responsivity at low noise. They are especially designed for low light applications that require typical gains larger than 100 and are offered within several TO-18 package configurations as flat glass, ball lens, light pipe and 905 nm filter.
Product
Excelitas’ C30902EH Avalanche Photodiodes are high speed, large area silicon reach-through APDs that provide high responsivity at low noise. They are especially designed for low light applications that require typical gains larger than 100 and are offered within several TO-18 package configurations as flat glass, ball lens, light pipe and 905 nm filter.
Product
The C30807EH is a high quality N-type Silicon PIN Photodiode with a 1.0 mm active diameter chip in a hermetically-sealed TO-18 package designed for the 300 nm to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².
Product
The C30845EH is a high quality N-type Silicon PIN quadrant photodiode in a hermetically sealed TO-8 package, designed for the 300 to 1100 nm wavelength range. Because of the large area (50 mm²), the device is useful in obtaining position information from both focused and defocused spots in either pulsed or CW mode.
Product
The C30955EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (APD) provides a 1.5 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
Product
The C30927EH-02 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused "reach-through" structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-02 is optimized for operating at 900 nm, providing high…
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The C30927EH-01 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused "reach-through" structure.
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The C30884EH Silicon Avalanche Photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm.
Product Category
Precise beam positioning can be achieved by using our quadrant PIN and avalanche photodetectors. They are designed with 4 pie-shaped quadrant sections from doping process, thus reducing to almost zero the “dead” space between each quadrant. Their structure allows high quantum efficiency and fast response for detection of photons in the 400 to 1100 nm range.
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The C30954EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 0.8 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
Product
The C30817EH Silicon Avalanche Photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz.
Product Category
The Excelitas C30927 family of Avalanche Photodiode (APD) Arrays and Quadrants utilize a double-diffused "reach-through" structure essentially eliminating dead space between pixels for optimal performance. This structure provides ultra-high sensitivity at 400-1000 nm. Three different variants are offered, depending on peak operation wavelength of interesting, including 800, 900 and 1060 nm.
Product Category
The 1064nm Long-Wavelength Enhanced Si APDs (C30954EH, C30955EH, and C30956EH) are made using a double-diffused “reach-through” structure. The design of these photodiodes are such that their long wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficiency of up to 40 % at 1060 nm.
Product Category
The high performance rear entry “reach-through” silicon APDs offer the best compromise in terms of cost and performance for applications requiring high-speed and low-noise photon detection from 400 nm up to 1100 nm. These Si APDs feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 3 mm.
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The C30741PFH-15S is a High-Speed Silicon PIN Photodiode with a 1.5 x 1.5 mm active area chip in a T1 ¾ visible-blocking plastic package.
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The C30733 Series combines various products of high-gain InGaAs Avalanche Photodiodes (APD) with 30 µm active area. Excelitas InGaAs APDs provide large quantum efficiency (QE), high responsivity and low noise in the spectral range between 1000 nm and 1700 nm. They are supplied in a hermetically sealed TO-18 package, or as FC/APC single mode fiber pigtail.
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The C30737LH-500-92N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 500 µm with enhanced 900nm response and a 905 nm optical bandpass in a leadless ceramic carrier (LCC).
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The C30737MH-500-90N Silicon Avalanche Photodiode (APD) provides an active diameter of 500 µm with enhanced 900 nm response in a leadless laminated carrier (LLC).
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The C30737LH-500-90N Silicon Avalanche Photodiode (APD) offers an active diameter of 500 µm with enhanced 900 nm response in a leadless ceramic carrier (LCC).
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The C30737PH-500-90N Silicon Avalanche Photodiode (APD) provides an active diameter 500 µm with enhanced 900 nm response in a plastic T 1¾ package.
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The C30741PH-15S is a high-speed Silicon PIN photodiode with a 1.5 x 1.5 mm active area chip in a T 1¾ clear plastic package.
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The C30737LH-230-92N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 230 µm with enhanced 900nm response and a 905 nm optical bandpass in a leadless ceramic carrier (LCC).
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The C30737MH-230-90N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 230µm and enhanced 900 nm response in a leadless laminated carrier (LLC).
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The C30737LH-230-90N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 230 µm with enhanced 900 nm response in a leadless ceramic carrier (LCC).
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The C30737PH-230-90N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 230 µm and enhanced 900 nm response in a Plastic T 1¾ package.
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The C30737LH-500-83N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 500µm with enhanced 800nm response and 650 nm optical bandpass in a leadless ceramic carrier (LCC).
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The C30737LH-500-81N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 500 µm with enhanced 800 nm response and a 635 nm optical bandpass in a leadless ceramic carrier (LCC).
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The C30723GH is a large-area InGaAs PIN Photodiode with a 5.0 mm active diameter chip in a TO-8 package and flat glass window. This photodidoe provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.
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The C30737MH-500-80N Silicon Avalanche Photodiode (APD) provides an active diameter of 500 µm with enhanced 800 nm response in a leadless laminated carrier (LLC).
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The C30737LH-500-80N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 500 µm and enhanced 800 nm response in a leadless ceramic carrier (LCC).
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The C30737PH-500-80N Silicon Avalanche Photodiode (APD) provides an active diameter of 500 µm with enhanced 800 nm response in a Plastic T 1¾ housing.
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The C30737LH-300-73N Silicon Avalanche Photodiode (APD) provides a 300 µm active diameter with enhanced 800nm response and a 650 nm optical bandpass in a leadless ceramic carrier (LCC).
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The C30737LH-300-72N Silicon Avalanche Photodiode (Si APD) provides a 300 µm active diameter with enhanced 800nm response and 905 nm optical bandpass in a leadless ceramic carrier (LCC).
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The C30737LH-300-71N Silicon Avalanche Photodiode (Si APD) provides a 300 µm active diameter with an enhanced 800 nm response and 635 nm optical bandpass in a leadless ceramic carrier (LCC).
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The C30737LH-300-70N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 300 µm and enhanced 800 nm response in a leadless ceramic carrier (LCC).
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The C30737LH-230-83N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 230 µm, enhanced 800nm response and 650 nm optical bandpass in a leadless ceramic carrier (LCC).
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The C30737LH-230-81N Silicon Avalanche Photodiode (SI APD) provides enhanced 800 nm response with an active diameter of 230 µm and a 635 nm optical bandpass in a leadless ceramic carrier (LCC).
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The C30737MH-230-80N Silicon Avalanche Photodiode (Si APD) offers enhanced 800 nm response with an active diameter of 230µm in a leadless laminated carrier (LLC).
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The C30737LH-230-80N Silicon Avalanche Photodiode (Si APD) offers enhanced 800 nm response with an active diameter of 230 µm in a leadless ceramic carrier (LCC).
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The C30739ECERH-2 Short-Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) covers the spectral range from less than 400 nm to greater than 700 nm. With low noise, high gain, low capacitance and an enhanced UV-response with a quantum efficiency above 70% at 430 nm, this Si APD is designed for low-light level applications such as molecular imaging. Its ceramic carrier package allows for easy handling and coupling to scintillation crystals such as LSO and BGO.
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The C30737PH-230-80N Silicon Avalanche Photodiode (Si APD) offers an active diameter of 230 µm and enhanced 800 nm response in a plastic T 1¾ through-hole package.
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The C30737CH-300-70 Silicon Avalanche Photodiode (Si APD) provides a 300 µm active diameter with enhanced 800 nm response in a leadless laminated carrier (LCC).
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The C30724PH Silicon Avalanche Photodiode (Si APD) offers 920 nm peak sensitivity and a low-temperature coefficient in a plastic TO-housing.
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The C30724EH-2 Silicon Avalanche Photodiode (Si APD) provides a 905 nm filter and low-temperature coefficient in a metal TO-housing.
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The C30739ECERH Short-Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) covers the spectral range from less than 400 nm to greater than 700 nm. With low noise, high gain, low capacitance and an enhanced UV-response with a quantum efficiency above 70% at 430 nm, this Si APD is designed for low-light-level applications such as molecular imaging. Its ceramic carrier package allows for easy handling and coupling to scintillation crystals such as LSO and BGO.
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The C30703FH-200 Silicon Avalanche Photodiode (Si APD) with dimensions of 10 mm x 10 mm is designed for extremely large areas and offered in a flat pack suitable for radiation detection. The C30703 Si APD is enhanced for blue wavelength response and has a peak quantum efficiency at ~ 530 nm.
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The C30703FH Series of Silicon Avalanche Photodiodes (Si APD) with dimensions of 10 mm x 10 mm are designed for extremely large areas and offered in a flat-pack package suitable for radiation detection. The Si APD C30703 is enhanced for blue-wavelength response and has a peak quantum efficiency at ~ 530 nm.
Product Category
The InGaAs PIN Detectors provide high quantum efficiency from 800 nm to 1700 nm. They feature low capacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and uniformity within two percent across the detector active area.
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The C30724EH Silicon Avalanche Photodiode (Si APD) offers 920 nm peak sensitivity and low-temperature coefficient in a metal TO-housing.
Product Category
The InGaAs Avalanche Photodiode product family from Excelitas features active area sizes ranging from 30 µm to 200 µm, catering to various applications requiring photonic detection between 1000 nm and 1700 nm. The C30645, C30662, and C30733 series of avalanche photodiodes (APDs) are high-speed, high-gain devices made from InGaAs/InP. They offer high quantum efficiency (QE), high responsivity, and low noise within the 1000 nm to 1700 nm spectral range, with optimization at 1300 nm and 1550 nm…
Product Category
Our C30724 Series of APDs provide high responsivity in the wavelength range of 800 to 950 nm and are designed to meet the needs of high-volume and low-cost applications. The C30724EH is in a hermetically-sealed TO-18 can. The C30724EH-2 is a modified TO-18 with a built in 905 nm narrow band pass filter. Lastly, the C30724PH is in a TO-18 plastic encapsulated package.
Product Category
The large-area, UV-enhanced Silicon Avalanche Photodiodes (Si APDs) are intended for use in a wide variety of broadband low-light-level applications covering the spectral range from below 400 to over 700 nm. These low noise, low capacitance and high gain Si APDs are available in flat-pack packages for either direct detection or easy coupling to scintillator crystals.
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The C30662 Series features a variety of large-area InGaAs Avalanche Photodiodes (APDs) with a 200 µm active area. Excelitas InGaAs APDs offer high quantum efficiency (QE), robust responsivity, and low noise across the spectral range of 1000 nm to 1700 nm. These devices are available in a hermetically sealed TO-18 package or on a ceramic carrier. The ceramic surface mount package facilitates easy integration into high-volume applications.
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The C30683 Series combines Excelitas' avalanche photodiodes (APD) with a high-speed transimpedance amplifier (TIA) in a hermetically sealed TO-8 package for extreme low-light detection. The modules deliverbandwidth of up to 450 MHz, making them ideal for demanding applications.
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The C30665GH-LC is a large-area InGaAs PIN Photodiode with a 3.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the…
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The C30642GH-LC is a large-area InGaAs PIN Photodiode with a 2.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the…
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The C30641GH-LC is a large-area InGaAs PIN Photodiode with a 1.0 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the…
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The C30619GH-LC is a large-area InGaAs PIN photodiode with a 0.5 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the…
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The C30618L-350 is a high-speed InGaAs PIN Photodiode with a 350 µm active diameter chip in a ceramic SMD package with window. This photodiode provides high quantum efficiency from 960 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.
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The C30617L-100 is a high-speed InGaAs PIN Photodiode with a 100 µm active diameter chip in a ceramic SMD package with window. This photodiode provides high quantum efficiency from 960 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.
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The C30645 Series combines various products of large-area InGaAs Avalanche Photodiodes (APD) with an 80 µm active area. Excelitas InGaAs APDs provide high quantum efficiency (QE), high responsivity, and low noise in the spectral range between 1000 nm and 1700 nm. They are supplied in a hermetically sealed TO-18 package or on a ceramic carrier. The ceramic surface mount package allows for easy integration into high-volume applications.
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The C30665GH is a large-area InGaAs PIN Photodiode with a 3.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within 2% across the detector active area.
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The C30642GH is a large-area InGaAs PIN Photodiode with a 2.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.
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The C30641GH is a large-area InGaAs PIN Photodiode with a 1.0 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.
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THe C30659 Series includes a Silicon (Si) or InGaAs avalanche photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. Our C30659-1550-R2AH device includes an Excelitas C30662EH InGaAs APD, optimized at 1550 nm.
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The C30659 Series includes a Silicon (Si) or InGaAs avalanche photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. Our C30659-1550-R2AH device has a C30662EH InGaAs APD, optimized at 1550 nm.
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The C30659 Series of InGaAs APD receivers includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. Our C30659-1550E-R08BH device includes a C30645EH InGaAs APD, optimized at 1550 nm.
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The C30659 Series of InGaAs APD receivers includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation.
Product
The C30619GH is a large-area InGaAs PIN photodiode with a 0.5 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.
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The C30618GH is a high-speed InGaAs PIN Photodiode with a 350 µm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.
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The C30618BFCH is a high-speed InGaAs PIN Photodiode with a 350 µm active diameter chip in TO-18 ball lens package and FC receptacle. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within 2% across the detector active area.
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The C30617BFCH is a high-speed InGaAs PIN Photodiode with a 100µm active diameter chip in TO-18 ball lens package and FC receptacle. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.
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The C30617BH is a high-speed InGaAs PIN Photodiode with a 100 µm active diameter chip in TO-18 ball lens package. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.
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The C30659-UV-1 includes a UV-Enhanced Silicon Avalanche Photodiode (Si APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation.
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The C30659 Series includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. Our C30659-1060-3AH device has a C30956EH Si APD, optimized at 1060 nm, and a 3 mm active diameter.
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The C30659 Series includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. Our C30659-1060E-R8BH device has a C30954EH Si APD optimized at 1060nm and a 0.8 mm active diameter.
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The C30618ECERH is a high-speed InGaAs PIN Photodiode with 350 µm diameter of active area on a rectangular ceramic carrier. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.
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The C30617ECERH is a high-speed InGaAs PIN Photodiode with 100 µm diameter of active area on a rectangular ceramic carrier. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity high linearity and uniformity within two percent across the detector active area.
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The C30659 Series of Hybrid Optical APD Receivers includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package to allow for ultra-low noise operation. Our C30659-1060-R8BH device has a C30954EH Si APD, optimized at 1060 nm and a 0.8 mm active diameter.
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The C30659 Series of Hybrid Optical APD Receivers includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier in the same hermetically-sealed TO-8 package to allow for ultra-low noise operation. Our C30659-900-R8AH device has a C30817EH Si APD with a peak response at 900 nm and 0.8 mm active diameter.
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The C30659 Series includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. Our C30659-900-R5BH device has a C30902EH Si APD with a peak response at 900 nm and 0.5 mm active diameter.
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The large area C30626FH Series Silicon Avalanche Photodiode (Si APD) with dimensions of 4.7 x 4.7 mm are offered in a flat-pack package for either direct detection or easy coupling to scintillator crystals.
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The BlueLight® Dairy UVC Flash Disinfection system is designed to integrate seamlessly with filling and sealing machinery. Its powerful modules effectively irradiate various configurations of pot carriers and cell plates. This system's modular design minimizes downtime and simplifies maintenance. Its compact footprint makes it ideal for applications with limited space.
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The BlueLight® SteriBelt is a high-performance UVC system designed specifically for disinfecting the surfaces of conveyor belts in the meat processing industry. Food producers encounter numerous challenges related to HACCP hygiene regulations, particularly concerning the disinfection of conveyor belts. The BlueLight SteriBelt UVC system effectively addresses these challenges, making it an ideal solution for food safety.
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BlueLight® Premium UV Systems provide effective disinfection for various types of food packaging, including sealing foils, cups, tubs, pouches, and gable-top cartons. These systems are known for being among the most reliable low-pressure options on the market and have been trusted by leading companies in the dairy industry for many years.
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The BlueLight® Hygienic System is specifically designed for reliable surface disinfection of food
packaging. It eliminates germs and significantly reduces energy costs, achieving an extraordinary Log 3 reduction and
savings of up to 90%. This UVC disinfection system provides high UV intensity and cold radiation and does not require water cooling, all at
a low investment cost, making it suitable for an Industry 4.0-ready environment.
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The Air D UVC system provides quick and easy disinfection without the use of chemicals, utilizing ultraviolet radiation, commonly known as ultraviolet germicidal irradiation (UVGI). This method of air disinfection significantly reduces the risk of infection and enhances the well-being of occupants. The Air D in-duct disinfection modules are designed to fit seamlessly into any supply air ductwork system. Its UV-C (UVGI) lamps are highly effective, require minimal maintenance, are ozone-free,…
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1102502 series supply is a 125 kV/250 mA CT X-Ray PS is highly regulated Power Supply with high frequency power conversion technology used for all power supply functions. It is designed for a high-power rotating anode X-ray tube and produces -125 kV at 250 mA in a Standard Operational Mode, -130 kV at 10 mA in a Tube Conditioning Operational Mode.
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Air Knives are infrared modules equipped with an airflow system optimized for drying product surfaces across a wide range of industrial applications. These modules feature a high-intensity and uniform air exchange that shortens the drying procedure and ensures a more efficient yield per unit of energy.
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The 180 kV/16 mA CT X-Ray PS is highly regulated Power Supply designed for use in an X-Ray computer tomography (CT) system. The unit is designed to run continuously at full output while mounted on a rotating gantry at speeds to 120 rpm up to 25 G. The high-voltage tank assembly is filled with oil for purposes of electrical insulation and cooling. Extensive internal interlocks and diagnostics are incorporated to provide safe and highly reliable operation.
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The XRSE High-Voltage Power Supply is a highly regulated power supply designed for use in an X-ray system. The supply provides high voltage for the X-ray tube, filament power and closed-loop emission current control. The unit is designed to run continuously at full output. High-frequency power conversion technology is used for all power supply functions. Extensive internal interlocks and diagnostics are incorporated to provide reliable and safe operation. Excelitas also designs and…
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The Excelitas -150kV, 100mA E-Beam HVPS power supply with integrated AC Filament Driver of 25 Vac, 50Hz, <20 Arms and Grid Driver of -30 - +170Vdc, 200mA. Grid-driver power supplies are negative, highly regulated power supplies designed for use in E-Beam systems, capable of producing 0 to -150kVdc, 100mA of DC power. The power supplies is designed to run continuously at full output power.
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This Excelitas High-Voltage Power Supply (HVPS) is designed to power an E-Beam gun. The 1102710 Series HVPS provides two outputs, the HV beam supply and an auxiliary supply floating at the HV beam supply output voltage. The high-voltage output is nominally -180 kilovolts at 70 mA for roughly 13 kilowatt power capability. The auxiliary supply is intended to power control and filament electronics in the E-beam gun which control the E-beam emission current drawn from the HVPS.
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The Excelitas E-Gun High Voltage Power Supply is a highly regulated power supply designed for use in an electron-beam system. The supply provides high voltage for the electron beam emitter, filament power and closed-loop emission current control. High frequency power conversion technology is used for all power supply functions. The unit is designed to run continuously at full output.
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Excelitas' -150 kV, 100 mA E-Beam HVPS power supply with integrated AC Filament Driver of 25 Vac, 50 Hz, <20 Arms and Grid Driver of -30 - +170 Vdc, 200 mA. Grid Driver power supplies are negative highly regulated power supplies designed for use in E-Beam systems, capable of producing 0 to -150 kVdc, 100 mA of DC power. The power supplies is designed to run continuously at full output power.
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The High-Voltage Power Supply is a highly regulated power supply. The supply provides high voltage and has electron-beam emitter, filament power and closed-loop emission current control if used as an E-Gun power supply. High-frequency power conversion technology is used for all power supply functions. The unit is designed to run continuously at full output.
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The APOLED model consists of a single high quality chip with excellent thermal properties and high flux. Excelitas offers custom white CCTs with high CRI values or any other wavelength die available. We guarantee minimum specifications, tight binning requirements and customized testing for our production lots, including guaranteed minimum CRI values in Ra, R9 and R13. Our micro-sized APOLEDs are small enough to allow for superior color mixing and dense packing.
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The ACULED® platform is a chip-on-board (COB) LED package containing four separately-addressable LED chips. We offer a wide selection of standard or custom wavelengths and various CCT whites with high color rendering. The ACULED package is ideal in medical lighting applications requiring tunable CCT white lighting with high CRI.
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The Excelitas family of high-voltage X-ray power supplies are highly regulated designs created for the demanding requirements of X-ray systems. These power supplies provide high voltage for X-ray tube, filament power and closed-loop emission current control. Some units run continuously at full power and others are designed for lower duty cycle applications that have high peak power demands.
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The Excelitas E-Gun High-Voltage Power Supply is a highly regulated power supply designed for use in an electron-beam system. The supply provides high voltage for the electron beam emitter, filament power and closed-loop emission current control. High frequency power conversion technology is used for all power supply functions. The unit is designed to run continuously at full output.
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Excelitas designs and manufactures ultraviolet solutions for disinfecting air, liquids, and solid surfaces. Our UVC light source solutions range from components to complete solutions using lighting technologies, including LED, Xenon, Kypton, Excimer, and Mercury-based solutions. Excelitas uses this complete portfolio of technologies to address various system requirements for specific applications that protect people and the environment from dangerous microbial contamination. With field-proven…
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Scientific cameras are an essential part of the world of research and experimentation. Utilizing sCMOS image sensors, these cameras help ensure the highest quality and accurate images. Our PCO scientific camera portfolio includes both cooled and uncooled sCMOS cameras. Cooled sCMOS cameras are equipped with an active cooling mechanism to help lower the sensor temperature, minimize dark current, and enable longer exposure times, which is beneficial for low-light applications such as…
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Excelitas offers a broad range of single- to multi-channel image intensified cameras through our renowned pco.dicam series. With extreme short exposure times down to 2.5ns, our pco.dicam cameras offer the ability to precisely address ultra-fast processes far beyond the capabilities of any other camera type. Featuring state-of-the-art scientific CMOS sensor technology, our pco.dicam intensified cameras combine high resolution, fast frame repetition rates, 16-bit dynamic range and extreme…
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Excelitas offers photonic detection solutions covering a very broad spectrum, from Gamma, X-Ray, UV, Visible and into the near Infrared...making it a simple choice to find the right detector for your unique detection application. Product ranges include Silicon and InGaAS PINs and APDs, hybrid receivers and photon counting modules. In addition to our wide offering of off-the-shelf devices, we also specialize in customized solutions for your specific needs.
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Excelitas offers a range of innovative Fiber Optic Light Sources and components with unsurpassed light output and configurable options for ease of design and speed to market. These LED light sources are designed to couple high-intensity white light into fiber-optic bundles for applications such as endoscopy, surgical headlamps, surgical microscopy, industrial borescopes, inspection systems, and machine vision.
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Excelitas offers Time-of-Flight (ToF) Chips and Modules based on proprietary CMOS/CCD imagers. The operating principle is based on the time-of-flight of photons emitted by the illumination source and reflected back from the object to the photosensitive pixels. The system measures the phase-shift between the emitted and received signal, which is proportional to the distance. High photo-sensitivity and high-resolution ADC allows measurement accuracy down to a centimeter level depending on the…
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Excelitas offers Photonic Detection Solutions ranging from Silicon and InGaAS PINs and Avalanche Photodiodes, Hybrid Receivers, and Photon Counting Modules to address high-performance, high-volume applications across a wide range of markets. Excelitas Thermal IR Sensors represent a broad range of Pyroelectric Detectors, Thermopile Detectors and IR Sensor Modules used for motion detection, presence monitoring, temperature measurement and gas detection.
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Excelitas offers a wide variety of single channel and array variants of pulsed laser diodes. With central wavelengths at 905 nm and 1550 nm, and packages ranging from high volume SMD to hermetically-sealed, metal-can TO, you are sure to find the correct component for your needs.With decades of experience in the field of semiconductor lasers and vertical integration, Excelitas is able to deliver the right product for various applications including range finding and LiDAR. In addition…
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The Excelitas Short-Arc Pulsed Xenon Lamps are the light sources of choice for precision performance lamp applications such as clinical and in-vitro diagnostics, life sciences, environmental monitoring, analytical instrumentation, and spectrophotometry. Short-Arc Xenon flash lamps are unconfined arc flashlamps which produce microseconds duration pulses of broadband light of high radiant intensities. Capable of operating at high repetition rates, these flashlamps generate light over a…
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Excelitas offers a wide range of flashlamp designs for various applications, including IPL, medical and industrial laser, solar simulation, and weathering. Additionally, these unique flashlamp designs are utilized in our complete Flash System solutions for applications such as rapid thermal processing and disinfection. Utilizing our unique design know-how and manufacturing capabilities obtained from decades of combined flashlamp experience, we work with our customers to develop the best…
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The VTE3322LAH is a 940 nm Infrared Emitting Diode (IRED) in a T-1 (3 mm) plastic package. It provides 1.5 mW of output power and a narrow beam angle of ±10°.
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The VTE1013H is a 940 nm Infrared Emitting Diode (IRED) in a hermetic TO-46 package. This IRED provides 30 mW of output power and wide beam angle of ±35°.
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The VTE1113H is a 940 nm Infrared Emitting Diode (IRED) in a hermetic TO-46 package with a lens. This IRED provides 30 mW of output power with a narrow beam angle of ±10°.
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The VTE1291W-2H is a 880 nm Infrared Emitting Diode (IRED) in a T 1 ¾ (5 mm) plastic package. This IRED provides 25 mW of output power with a wide beam angle of ±25° and is UL-recognized.
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The VTE1291W-1H is a 880 nm Infrared Emitting Diode (IRED) in a T-1 ¾ (5 mm) plastic package. It provides 20 mW of output power and a wide beam angle of ±25°, and is UL recognized.
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The VTE3374LAH is a 880 nm Infrared Emitting Diode (IRED) in a T-1 (3 mm) plastic package. It provides 5 mW of output power. and a narrow beam angle of ±10°.
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The VTE3372LAH is a 880 nm Infrared Emitting Diode (IRED) in a T-1 (3 mm) plastic package. It provides 3 mW of output power and a narrow beam angle of ±10°.
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The VTE1163H is an 880 nm Infrared Emitting Diode (IRED) in a hermetic TO-46 package with a lens. This IRED provides 110 mW of output power and a narrow beam angle of ±10°.
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The Excelitas 880 nm Infrared Emitting Diode (IRED) provides 80 mW of output power and a wide beam angle of ±35° in a hermetic TO-46 package.
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Infrared Emitting Diodes (IREDs) are solid state light sources emitting in the near infrared part of the spectrum. The emission wavelength is closely matched to the response peak of silicon photodiodes and phototransistors. This product line provides a broad range of lens and power output options. Both top and side radiating cases are available as well as a wide range of emission beam profiles. These IREDs may be operated in either CW or pulsed operating modes.IREDs…
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Excelitas Technologies designs and manufactures high-performance, custom-tailored power supplies and systems for leading OEMs in diverse markets including: Medical, Dental, Semiconductor, Industrial Manufacutring, Defense, Aerospace and Safety and Security. Our broad product portfolio, which leverages the latest advances in power conversion technology, is based on field-proven designs.
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Excelitas Technologies offers a wide range of high-performance electronics, power and energetics technologies to drive your most demanding photonic systems. Our Electronics & Power offering includes Capacitor Chargers, Spark Gaps and Transformers, High-Voltage DC Power Supplies and Atomic Frequency Standards. Our Energetics portfolio includes Electronic Safe & Arm devices, Detonators, Ignition Safety devices, and Rocket Motor Initiators.
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Excelitas Thermopile Sensors offer leading-edge, non-contact temperature measurement for applications in smart home, smart appliances, intelligent thermostats and HVAC control systems, and ear and forehead thermometers.Our Thermopile Detectors are typically Thermopiles with integrated Thermistor providing analog output in various packages. Special designs include built-in lenses or reflectors to enhance sensing performance, Isothermal constructions, or Dual narrow-band windows. Our…
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Excelitas Pyroelectric Infrared Detectors define the leading edge of motion detection technology, offering a variety of both digital and analog Pyroelectric IR Detectors to serve a wide range of applications in smart home, smart city, IOT, burglary detection and security systems. With Pyroelectrics available in Single-, Dual- and Quad-Element configurations we offer you a wider range of different sized infrared sensor surfaces, which directly translates to enhanced performance and…
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Excelitas CoolEYE™ IR Arrays offer leading-edge, non-contact temperature measurement for applications where a finer spatial temperature resolution is necessary. This can be achieved with either a sweeping linear array with 8 or 16 pixels, or a static 2-dimensional array with often only 4 x 4 pixels. These sensors are well-suited for applications such as elevated skin temperature screening, presence and motion detection, room climate control, fire and overheat detection and much more.Our…
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The VTP3410LAH is is a silicon photodiode in a visible blocking end-looking long T1 lensed package with an enhanced response in the near IR spectral range. This photodiode exhibits a very high shunt resistance, low dark current and low capacitance.
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The VTP1188SH is a silicon photodiode in a lensed ceramic package. This photodiode provides an enhanced response in the visible and near IR spectral range, as well as exhibits a very high shunt resistance, low dark current and low capacitance.
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The VTD31AAH is a silicon photodiode on ceramic substrate coated with clear epoxy, and a CLD31AA industry equivalent. This photodiode provides a low dark current, fast response and wide field-of-view.